Mmeghachi omume ejikọta Silicon Carbide Taịlị
Uru nke Reaction Bonded Silicon Carbide
1) Njupụta dị ala.
2) Mgbochi ire ere.
3) Iguzogide iyi.
4) Mgbochi oxidation.
5) Mgbochi nke Abrasion.
6) Ezigbo iguzogide ujo okpomọkụ (n'ihi obere mmụba okpomọkụ na nnukwu njikwa okpomọkụ).
7) Ike dị mma n'oge okpomọkụ dị elu.
8) Njikwa nha dị mma nke ọdịdị dị mgbagwoju anya.
Ngwaahịa ndị na-eguzogide iyi: efere silicon carbide, brik silicon carbide, mkpuchi pipe, Pipe Cone, cyclone, wdg.
Ngwongwo ụlọ: Efere, Ogwe osisi, Roller, Nozzle Burner, Ogwe osisi gbara gburugburu, ogwe osisi square, ogwe oghere. Crucible, Sagger, wdg.
Ndị ọzọ: Desulfurization nozzles
Ojiji nke Reaction Bonded Silicon Carbide:
Silicon carbide ejiri ihe ndị na-eme ka ihe na-arụ ọrụ nke ọma egosila na ọ bụ ezigbo ihe eji eme ihe dịka ihe mkpuchi ọkpọkọ, ihe ndị na-adịghị arụ ọrụ nke ọma, ihe ndị na-egbochi mmiri na ihe ndị ọzọ na-emebi emebi n'ebe a na-egwupụta ihe, yana ụlọ ọrụ ndị ọzọ.
Isi Paramita
| Njirimara | Nkeji | SiSiC/RBSIC |
| Njupụta nnukwu (SiC) | V01% | ≥85 |
| Njupụta dị ukwuu | g/cm3 | 3.01 |
| Ntụpọ doro anya | % | <0.1 |
| Modulu nke mgbawa na 20℃ | Mpa | 250 |
| Modulu nke mgbawa na 1200℃ | Mpa | 280 |
| Modulu nke mgbanwe na 20℃ | GPA | 330 |
| Ike nke mgbawa | Mpa*m1/2 | 3.3 |
| Ọgbakọ okpomọkụ na 1200℃ | wm-1.k-1 | 45 |
| Mgbasawanye okpomọkụ na 1200℃ | a×10-6/℃ | 4.5 |
| Nguzogide ọkụ ujo na 1200 ℃ | Ọ dị ezigbo mma | |
| Ọnụọgụ nke radieshon okpomọkụ | <0.9 | |
| Oke okpomọkụ ọrụ kachasị | ℃ | 1350 |
Nha
enwere ike ịhazi ya dịka ihe ndị ahịa chọrọ si dị.
Ọrụ
Anyị na-anabata iwu omenala.
Ọ bụrụ na ịchọrọ ịmatakwu gbasara ngwaahịa a, biko kpọtụrụ anyị, anyị ga-enyekwa gị ngwaahịa kacha mma na ọrụ kacha mma!
